By Ezeugwu, George Chukwuemeka
Thin films of' Ri2S3 were deposited on glass substrates at room temperature by
chemical bath deposition techniques. Some impurities such as C&\, IlgC12, I ,HCl and
NiCI2 were introduced in the chemical baths in order to study their effects on the
Ri2S3t thin films. Similarly the dip times used for deposition of the films were varied
and ranged between four and eighteen hours and their effects were then studied.